NEW PRODUCT
DMG6301UDW
25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 25V
RDS(ON)
4Ω @ VGS = 4....
NEW PRODUCT
DMG6301UDW
25V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 25V
RDS(ON)
4Ω @ VGS = 4.5V 5Ω @ VGS = 2.7V
ID TA = +25°C
0.24A
0.22A
Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories,
Transistors, etc
Features
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected Gate (>6kV Human Body Model) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT363 Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate)
SOT363
D2 G1 S1
G1
D1 G2
D2
ESD HBM >6kV
Top View
S2 G2 D1
Top View Internal Schematic
Gate Protection Diode
S1
Gate Protection Diode
Equivalent circuit
S2
Ordering Information (Note 4)
Notes:
Part Number DM...