DMG563H1

DMG563H1 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits  Features  Low collector-emitter saturation voltage VCE(sat)  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: T1  Basic Part Number DRC2144E + DRA2143X (Collector-base connection)  Packaging DMG563H10R Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Tr1 Collector-emitter voltage (Base open) Collector current Collector-base voltage (Emitter open) Tr2 Collector-emitter voltage (Base open) Collector current Total power dissipation Overall Junction temperature Storage temperature VCBO VCEO IC VCBO VCEO IC PT Tj Tstg 50 50 100 –50 –50 –100 150 150 –55 to +150 Unit V V mA V V mA mW °C °C Unit: mm 1: Emitter (Tr1) 2: Base (Tr1) 3: Emitter (Tr2) Panasonic JEITA Code 4: Collecter (Tr2) 5: Base (Tr2) Collecter (Tr1) SMini5-F3-B SC-113CB SOT-353 (B2, C1) 5 (C2) 4 R1 Tr1 Tr2 R2 R1 R2 123 (E1) (B1) (E2) Tr1 R1 Resistance R2 value Tr2 R1 R2 47 47 4.7 10 kΩ kΩ kΩ kΩ Publication date: February 2013 Ver. BED 1 DMG563H1  Electrical Characteristics Ta = 25°C±3°C  Tr1 Parameter Symbol Conditions Min Typ Max Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 Collector-base cutoff current (Emitter o...