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DMG4406LSS

Diodes

N-Channel MOSFET

ADVANCE INNEFWORPRMOADTIUOCNT DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max ...


Diodes

DMG4406LSS

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Description
ADVANCE INNEFWORPRMOADTIUOCNT DMG4406LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 11mΩ @ VGS = 10V 15mΩ @ VGS = 4.5V ID max TA = 25°C 10.3A 9.3A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production Low On-Resistance Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 1) "Green" Device, Halogan and Antimony Free (Note 2) Qualified to AEC-Q101 standards for High Reliability Mechanical Data Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) SO-8 Top View SD SD SD GD Top View Internal Schematic Ordering Information (Note 3) Notes: Part Number DMG4406LSS-13 Case SO-8 Packaging 2500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com...




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