Document
NEW PRODUCT
Product Summary
V(BR)DSS -30V
RDS(ON) max 90mΩ @ VGS = -10V 134mΩ @ VGS = -4.5V
ID max TA = +25°C
-3.8A
-3.1A
DMG2307L
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
General Purpose Interfacing Switch Power Management Functions Load Switch for Portable Devices
Mechanical Data
Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.08 grams (approximate)
Ordering Information (Notes 4 & 5)
Notes:
Part Number DMG2307L-7 DMG2307LQ-7
Compliance Standard Automotive
Case SOT-23 SOT-23
Packaging 3000Tape & Reel 3000Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
G24 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
Date Code Key Year Code
Chengdu A/T Site
2009 W
2010 X
Month Code
Jan Feb 12
DMG2307L
Document number: DS35414 Rev. 3 – 2
Shanghai A/T Site
2011 Y
2012 Z
2013 A
Mar Apr May Jun 3456
1 of 6 www.diodes.com
2014 B
Jul 7
2015 C
Aug 8
2016 D
Sep Oct 9O
2017 E
2018 F
Nov Dec ND
November 2013
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 7) VGS = -10V
Continuous Drain Current (Note 7) VGS = -10V
Continuous Drain Current (Note 7) VGS = -4.5V Pulsed Drain Current (Note 7)
Steady State
Steady State
t ≦10sec
Steady State
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
Symbol VDSS VGSS ID
ID
ID
ID IDM
DMG2307L
Value -30 ±20
-2.5 -2.0
-3.8 -3.0
-4.6 -3.6
-3.1 -2.5
-20
Units V V A
A
A
A A
NEW PRODUCT
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Total Power Dissipation (Note 7) t ≦ 10sec Thermal Resistance, Junction to Ambient (Note 7) t ≦ 10sec
Operating and Storage Temperature Range
Symbol
PD RθJA PD RθJA PD RθJA TJ, TSTG
Value 0.76 159 1.36 94 1.9 65.8 -55 to +150
Units W
°C/W W
°C/W W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8)
@TC = +25°C
BVDSS IDSS IGSS
-30 – –
–– – -1.0 – ±100
Gate Threshold Voltage Static Drain-Source On-Resistance
VGS(th)
-1.0
–
-3.0
RDS (ON)
– –
70 90 105 134
Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 9)
|Yfs| – 4.8 – VSD – -0.75 -1.0
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on)
tr tD(off)
tf
– 371.3 – – 51.3 – – 45.9 – – 17 – – 4.0 – – 8.2 – – 0.9 – – 1.2 – – 4.8 – – 7.3 – – 22.4 – – 13.4 –
Unit Test Condition
V VGS = 0V, ID = -250μA μA VDS = -30V, VGS = 0V nA VGS = ±20V, VDS = 0V
V VDS = VGS, ID = -250μA
mΩ
VGS = -10V, ID = -2.5A VGS = -4.5V, ID = -2.5A
S VDS = -10V, ID = -2.5A
V VGS = 0V, IS = -1A
pF
pF pF
VDS = -15V, VGS = 0V, f = 1.0MHz
.