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DMG2307L Dataheets PDF



Part Number DMG2307L
Manufacturers Diodes
Logo Diodes
Description P-CHANNEL MOSFET
Datasheet DMG2307L DatasheetDMG2307L Datasheet (PDF)

NEW PRODUCT Product Summary V(BR)DSS -30V RDS(ON) max 90mΩ @ VGS = -10V 134mΩ @ VGS = -4.5V ID max TA = +25°C -3.8A -3.1A DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 standards for High Reliability Description and Applications This MOSFET has been designed to minimize the .

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NEW PRODUCT Product Summary V(BR)DSS -30V RDS(ON) max 90mΩ @ VGS = -10V 134mΩ @ VGS = -4.5V ID max TA = +25°C -3.8A -3.1A DMG2307L P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  General Purpose Interfacing Switch  Power Management Functions  Load Switch for Portable Devices Mechanical Data  Case: SOT-23  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See diagram  Terminals: Finish  Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.08 grams (approximate) Ordering Information (Notes 4 & 5) Notes: Part Number DMG2307L-7 DMG2307LQ-7 Compliance Standard Automotive Case SOT-23 SOT-23 Packaging 3000Tape & Reel 3000Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information G24 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Date Code Key Year Code Chengdu A/T Site 2009 W 2010 X Month Code Jan Feb 12 DMG2307L Document number: DS35414 Rev. 3 – 2 Shanghai A/T Site 2011 Y 2012 Z 2013 A Mar Apr May Jun 3456 1 of 6 www.diodes.com 2014 B Jul 7 2015 C Aug 8 2016 D Sep Oct 9O 2017 E 2018 F Nov Dec ND November 2013 © Diodes Incorporated Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 6) VGS = -10V Continuous Drain Current (Note 7) VGS = -10V Continuous Drain Current (Note 7) VGS = -10V Continuous Drain Current (Note 7) VGS = -4.5V Pulsed Drain Current (Note 7) Steady State Steady State t ≦10sec Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID ID ID IDM DMG2307L Value -30 ±20 -2.5 -2.0 -3.8 -3.0 -4.6 -3.6 -3.1 -2.5 -20 Units V V A A A A A NEW PRODUCT Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Total Power Dissipation (Note 7) t ≦ 10sec Thermal Resistance, Junction to Ambient (Note 7) t ≦ 10sec Operating and Storage Temperature Range Symbol PD RθJA PD RθJA PD RθJA TJ, TSTG Value 0.76 159 1.36 94 1.9 65.8 -55 to +150 Units W °C/W W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) @TC = +25°C BVDSS IDSS IGSS -30 – – –– – -1.0 – ±100 Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) -1.0 – -3.0 RDS (ON) – – 70 90 105 134 Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 9) |Yfs| – 4.8 – VSD – -0.75 -1.0 Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf – 371.3 – – 51.3 – – 45.9 – – 17 – – 4.0 – – 8.2 – – 0.9 – – 1.2 – – 4.8 – – 7.3 – – 22.4 – – 13.4 – Unit Test Condition V VGS = 0V, ID = -250μA μA VDS = -30V, VGS = 0V nA VGS = ±20V, VDS = 0V V VDS = VGS, ID = -250μA mΩ VGS = -10V, ID = -2.5A VGS = -4.5V, ID = -2.5A S VDS = -10V, ID = -2.5A V VGS = 0V, IS = -1A pF pF pF VDS = -15V, VGS = 0V, f = 1.0MHz .


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