VBT6045CBP-M3

www.vishay.com VBT6045CBP-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A TMBS ® TO-263AB K 2 1 VBT6045CBP PIN 1 K PIN 2 HEATSINK FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C TJ 200 °C max. in solar bypass mode application Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM IFSM 2 x 30 A 45 V 320 A VF at IF = 30 A 0.47 V TOP max. (AC mode) TJ max. (DC forward current) Diode variation 150 °C 200 °C Common cathode MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) (1) Peak forward surge current 8.3 ms single half sine-wave superimposed on...