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FZT688B Dataheets PDF



Part Number FZT688B
Manufacturers Kexin
Logo Kexin
Description NPN Silicon Planar Medium Power High Gain Transistor
Datasheet FZT688B DatasheetFZT688B Datasheet (PDF)

SMD Type Transistors NPN Silicon Planar Medium Power High Gain Transistor FZT688B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector cur.

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SMD Type Transistors NPN Silicon Planar Medium Power High Gain Transistor FZT688B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 12 12 5 4 10 2 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type Transistors Electrical Characteristics Ta = 25 Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * Static Forward Current Transfer Ratio* Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time * Pulse test: tp = 300 ìs; d 0.02. FZT688B Symbol Testconditons V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO VCB=10V IEBO VEB=4V IC=0.1A, IB=1mA IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=50mA IC=3A, IB=20mA IC=4A, IB=50mA VBE(sat) IC=3A, IB=20mA VBE(on) IC=3A, VCE=2V IC=0.1A, VCE=2V hFE IC=3A, VCE=2V IC=10A, VCE=2V fT IC=50mA, VCE=5V f=50MHz Cibo VEB=0.5V, f=1MHz Cobo VCB=10V, f=1MHz t(on) IC=500mA, VCC=10V t(off) IB1=50A,IB2=50mA Marking Marking FZT688B Min Typ Max Unit 12 V 12 V 5V 0.1 ìA 0.1 ìA 0.04 0.06 0.18 V 0.35 0.40 1.1 V 1.0 V 500 400 100 150 MHz 200 pF 40 pF 40 ns 500 ns 2 www.kexin.com.cn .


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