Document
SMD Type
Transistors
NPN Silicon Planar Medium Power High Gain Transistor
FZT688B
0.1max +0.050.90
-0.05
+0.151.65 -0.15
Features
Extremely low equivalent on resistance; RCE(sat)83mÙ at 3A. Gain of 400 at IC=3 Amps and very low saturation voltage.
SOT-223
6.50+0.2 -0.2
3.00+0.1 -0.1 4
Unit: mm 3.50+0.2
-0.2
0.90+0.2 -0.2
7.00+0.3 -0.3
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range
123 2.9 4.6
0.70+0.1 -0.1
1 base 2 collector 3 emitter
Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg
Rating 12 12 5 4 10 2
-55 to +150
Unit V V V A A W
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SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter Breakdown Voltages Breakdown Voltages Breakdown Voltages Collector Cut-Off Current Emitter Cut-Off Current
Collector-emitter saturation voltage *
Base-emitter saturation voltage * Base-Emitter Turn-On Voltage *
Static Forward Current Transfer Ratio*
Transitional frequency Input capacitance Output capacitance Turn-on time Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
FZT688B
Symbol
Testconditons
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
ICBO VCB=10V
IEBO VEB=4V
IC=0.1A, IB=1mA IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=50mA IC=3A, IB=20mA IC=4A, IB=50mA VBE(sat) IC=3A, IB=20mA
VBE(on) IC=3A, VCE=2V
IC=0.1A, VCE=2V hFE IC=3A, VCE=2V
IC=10A, VCE=2V
fT IC=50mA, VCE=5V f=50MHz
Cibo VEB=0.5V, f=1MHz
Cobo VCB=10V, f=1MHz
t(on) IC=500mA, VCC=10V
t(off) IB1=50A,IB2=50mA
Marking
Marking
FZT688B
Min Typ Max Unit
12 V
12 V
5V
0.1 ìA
0.1 ìA
0.04 0.06 0.18 V 0.35 0.40
1.1 V
1.0 V 500 400 100 150 MHz
200 pF
40 pF
40 ns
500 ns
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