FZT657

SMD Type Transistors 0.1max +0.050.90 -0.05 +0.151.65 -0.15 NPN Silicon Planar Medium Power Transistor FZT657 Features Low saturation voltage SOT-223 6.50+0.2 -0.2 Unit: mm 3.50+0.2 -0.2 3.00+0.1 -0.1 4 0.90+0.2 -0.2 7.00+0.3 -0.3 123 2.9 4.6 0.70+0.1 -0.1 1 Base 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range Symbol VCBO VCEO VEBO ICM IC Ptot Tj:Tstg Rating 300 300 5 1 0.5 2 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo Testconditons IC=100ìA IC=10mA* IE=100ìA VCB=200V VEB=3V IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE =5V* IC=10mA, VCE =5V* IC=100mA, VCE =5V* IC=10mA, VCE =20V,f=20MHz VCB =20V, f=1MHz * Measured under pulsed conditions. Pulse Width=300ìs. Duty cycle 2% Marking Marking FZT657 Min Typ. Max Unit 300 V 300 V 5V 0.1 ìA 0.1 ìA 0.5 V 1.0 V 1.0 V 40 50 30 MHz 20 pF www.kexin.com.cn 1 ...