FZT651

SMD Type Transistors NPN Silicon Planar High Performance Transistors FZT651 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features 60 Volt VCEO. 3 Amp continuous current. Low saturation voltage. SOT-223 6.50+0.2 -0.2 3.00+0.1 -0.1 4 Unit: mm 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current Power dissipation Operating and storage temperature range 123 2.9 4.6 0.70+0.1 -0.1 1 base 2 collector 3 emitter Symbol VCBO VCEO VEBO IC ICM Ptot Tj,Tstg Rating 80 60 5 3 6 2 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-Emitter Turn-On Voltage * Static Forward Current Transfer Ratio Transitional frequency Output capacitance Switching times * Pulse test: tp = 300 ìs; d 0.02. Marking Marking FZT651 FZT651 Transistors Symbol Testconditons V(BR)CBO IC=100ìA V(BR)CEO IC=10mA V(BR)EBO IE=100ìA ICBO VCB=60V VCB=60V,Ta = 100 IEBO VEB=4V VCE(sat) IC=1A, IB=100mA IC=3A, IB=300mA VBE(sat) IC=1A, IB=100mA VBE(on) IC=1A, VCE=2V IC=50mA, VCE =2V* hFE IC=500mA, VCE =2V* IC=1A, VCE =2V* fT Cobo ton toff IC=2A, VCE =2V* IC=100mA, VCE=5V f=100MHz VCB=1...