SMD Type
TransistIoCrs
Medium Power Transistor FMMTL619
Features
Very low equivalent on-resistance;RCE(sat)=160mÙ at ...
SMD Type
TransistIoCrs
Medium Power
Transistor FMMTL619
Features
Very low equivalent on-resistance;RCE(sat)=160mÙ at 1.25A.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
0-0.1 +0.10.38
-0.1
+0.10.97 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak pulse current Base current Power dissipation Operating and storage temperature range
Symbol VCBO VCEO VEBO IC ICM IB Ptot Tj,Tstg
Rating 100 50 5 1.25 2 200 500
-55 to +150
Unit V V V A A mA
mW
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SMD Type
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-base cut-off current Emitter-base current
Collector-emitter saturation voltage
Base-emitter saturation voltage Base-emitter ON voltage
DC current gain
Current-gain-bandwidth product Output capacitance Turn-on time Turn-off time
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
L69
FMMTL619
Symbol V(BR)CBO IC=100ìA V(BR)CEO IC=5mA* V(BR)EBO IE=100ìA
ICBO VCB=40V IEBO VEB=4V
Testconditons
IC=100mA, IB=10mA* VCE(sat) IC=250mA, IB=10mA*
IC=500mA, IB=25mA* IC=1.25A, IB=125mA*
VBE(sat) IC=1.25A, IB=125mA*
VBE(on) IC=1.25A, VCE=2V*
hFE
fT Cobo t(on) t(off)
IC=10mA, VCE=5V IC=200mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V*
IC=50mA, VCE=...
