CMDD7006

PRELIMINASURCRMYFADCDE70M0O6 UNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE CentralTM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMDD7006 is a silicon switching diode manufactured by the epitaxial planar process and packaged in an epoxy molded SOD-323 surface mount case. This device is designed for applications requiring high voltage switching diodes. MARKING CODE: 6C7 SOD-323 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continous Forward Current YPeak Repetitive Forward Current RForward Surge Current, tp=1.0 µs Forward Surge Current, tp=1.0 s APower Dissipation INOperating and Storage Junction Temperature LIMThermal Resistance VR VRRM IF IFRM IFSM IFSM PD TJ, Tstg ΘJA 600 600 100 300 4.0 1.0 250 -65 to +150 500 EELECTRICAL CHARACTERISTICS: SYMBOL PRIR TEST CONDITIONS VR=480V (TA=25°C unless otherwise noted) MIN TYP MAX 7.0 100 IR VR=480V, TA=150°C 100 BVR IR=1.0µA 600 675 VF IF=10mA 0.88 1.0 VF IF=50mA 1.04 1.2 VF IF=100mA 1.16 1.4 CT VR=0V, f=1.0 MHz 5.0 trr IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 500 UNITS V V mA mA A A mW °C °C/W UNITS nA µA V V V V pF ns R0 (12-January 2004) CentralTM Semiconductor Corp. PRELIMSIUNRCAFMARDCDYE7M00O6UNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE 2) ANODE MARKING CODE: 6C7 R0 (12-January 2004) ...