1N4446

1N4446 1N4446 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Symbol Parameter Value VRRM Maximum Repetitive Reverse Voltage 100 IF(AV) Average Rectified Forward Current 200 IFSM Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond 1.0 4.0 Tstg Storage Temperature Range TJ Operating Junction Temperature -65 to +200 175 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient Value 500 300 Units V mA A A °C °C Units mW °C/W Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions VR Breakdown Voltage VF Forward Voltage IR Reverse Current CT Total Capacitance trr Reverse Recovery Time IR = 100 µA IF = 20 mA VR = 20 V VR = 20 V, TA = 150°C VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6 V, RL = 100 Ω, Irr = 1.0 mA Min 100 Max 1.0 25 50 4 4 Units V V nA µA pF ns 2003 Fairchild Semiconductor Corporation 1N4446, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is...