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HS3JB Dataheets PDF



Part Number HS3JB
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description 3.0AMPS High Efficient Surface Mount Rectifiers
Datasheet HS3JB DatasheetHS3JB Datasheet (PDF)

creat by ART HS3AB - HS3MB 3.0AMPS High Efficient Surface Mount Rectifiers SMB/DO-214AA Features — Glass passivated junction chip. — For surface mounted application — Low forward voltage drop — Low profile package — Built-in stain relief, ideal for automatic placement — Fast switching for high efficiency — High temperature soldering: 260℃/10 seconds at terminals — Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260℃ — Plastic material used carries Underwriters Laboratory Classifica.

  HS3JB   HS3JB



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creat by ART HS3AB - HS3MB 3.0AMPS High Efficient Surface Mount Rectifiers SMB/DO-214AA Features — Glass passivated junction chip. — For surface mounted application — Low forward voltage drop — Low profile package — Built-in stain relief, ideal for automatic placement — Fast switching for high efficiency — High temperature soldering: 260℃/10 seconds at terminals — Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260℃ — Plastic material used carries Underwriters Laboratory Classification 94V-0 — Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data — Case: Molded plastic — Terminal: Pure tin plated, lead free — Polarity: Indicated by cathode band — Packing: 12mm tape per EIA STD RS-481 — Weight: 0.093 grams Ordering Information (example) Part No. Package Packing Packing code Packing code (Green) HS3AB SMB 850 / 7" REEL R5 R5G Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Parameter Maximum Repetitive Peak Reverse Voltage Symbol HS 3AB HS 3BB HS 3DB HS 3FB HS 3GB HS 3JB VRRM 50 100 200 300 400 600 Maximum RMS Voltage VRMS 35 70 140 210 280 420 Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 Maximum Average Forward Rectified Current IF(AV) 3 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) IFSM 100 Maximum Instantaneous Forward Voltage (Note 1) @3A VF 1.0 1.3 Maximum Reverse Current @ Rated VR TA=25 ℃ TA=125 ℃ IR Maximum Reverse Recovery Time (Note 2) Trr Typical Junction Capacitance (Note 3) Cj Typical Thermal Resistance Operating Temperature Range RθjA TJ Storage Temperature Range TSTG Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 10 250 50 80 60 - 55 to + 150 - 55 to + 150 HS 3KB 800 560 800 HS 3MB 1000 700 1000 1.7 75 50 Unit V V V A A V uA nS pF OC/W OC OC Version:I13 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE URRENT (A) RATINGS AND CHARACTERISTIC CURVES (HS3AB THRU HS3MB) 3.5 3 2.5 2 1.5 1 0.5 0 0 300 FIG.1 FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 25 50 75 100 125 150 LEAD TEMPERATURE (oC) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 175 250 8.3mS Single Half Sine Wave JEDEC Method 200 TA=25℃ 150 100 50 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 1000 FIG. 4 TYPICAL JUNCTION CAPACITANCE 175 150 TA=25℃ 125 100 HS3AB-HS3GB 75 50 HS3JB-HS3MB 25 0 0.1 1 10 100 REVERSE VOLTAGE (V) 1000 INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA) 1000 100 FIG. 2 TYPICAL REVERSE CHARACTERISTICS TA=125℃ 10 TA=25℃ 1 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 5 TYPICAL FORWARD CHARACTERISTICS 100 TA=25℃ 10 HS3AB-HS3DB HS3GB 1 0.1 0 HS3JB-HS3MB 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) CAPACITA.


HS3GB HS3JB HS3KB


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