SFF27N50Z

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF27N50 ___ ___ ___ │ │ └ Screening 2/ ││ __ = Not Screened ││ TX = TX Level ││ TXV = TXV Level │ │ │ └ S = S Level Lead Option 3/ │ __ = Straight Leads │ │ └ DB = Down Bend UB = Up Bend Package 3/ 4/ M = TO-254 Z = TO-254Z SFF27N50M SFF27N50Z 27 AMP , 500 Volts, 175 mΩ Avalanche Rated N-channel MOSFET Features:  Rugged poly-Si gate  Lowest ON-resistance in the industry  Avalanche rated  Hermetically Sealed, Isolated Package  Low Total Gate Charge  Fast Switching  TX, TXV, S-Level screening available  Improved (RDS(ON) QG) figure of merit Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Single and Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) continuous transient @ TC = 25ºC @ TC = 25ºC @ TC = 125ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC Symbol VDSS VGS ID1 ID2 ID3 IAR EAS EAR PD TOP & TSTG RθJC Value 500 ±20 ±30 27 27 18 35 1500 50 100 -55 to +150 1.0 (typ.0.75) Units V V A A A mJ W ºC ºC /W NOTES: *Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For ordering information, price, and availability - contact factory. 2/ Scr...