Document
SDD10N01 thru SDD10N07
®
Pb Free Plating Product
SDD10N01 thru SDD10N07
Pb
10 Ampere Heatsink Dual Tandem Polarity General Purpose Rectifier Diodes
Features Latest&matured mesa technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Application
Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,UPS and Motor Control Car Audio Amplifiers and Sound Device Systems etc..
Mechanical Data Case: Heatsink TO-220CE package Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately
TO-220AB
9.90±0.20
φ3.60±0.20
4.50±0.20
Unit:mm 1.30±0.20
6.50±0.20
15.70±0.20 2.80±0.20
9.19±0.20
3.02±0.20
13.08±0.20
1.27±0.20 1.52±0.20
2.40±0.20
2.54typ 2.54typ
0.80±0.20
0.50±0.20
Case
Case
Case
Case
Positive
Negative
Doubler
Series
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Prefix "SDK"
Prefix "SDA"
Prefix "SDS"
Prefix "SDD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load
SYMBOL SDD SDD SDD SDD SDD SDD SDD 10N01 10N02 10N03 10N04 10N05 10N06 10N07
VRRM
50 100 200 400 600 800 1000
VRMS
35 70 140 280 420 560 700
VDC 50 100 200 400 600 800 1000
IF(AV)
10
UNIT
V V V A
IFSM 125 A
Maximum instantaneous forward voltage (Note 1) @5A
VF
1.1 V
Maximum reverse current @ rated VR
TJ=25°C TJ=125°C
IR
Typical junction capacitance (Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle
CJ RθJC TJ TSTG
Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
5
200 30 3 - 55 to +150 - 55 to +150
μA
pF °C/W
°C °C
Rev.05 © 2006 Thinki Semiconductor Co., Ltd.
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SDD10N01 thru SDD10N07
®
RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted)
FIG.1 MAXMUM FORWARD CURRENT DERATING CURVE
12
AVERAGE FORWARD CURRENT(A)
10
8
6
Resistive of 4 inductive load
2 0 50 100 CASE TEMPERATURE(°C)
150
PEAK FORWARD SURGE CURRENT(A)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
175
150
8.3ms single half sine wave 125
100
75
50
25
0 1
10 NUMBER OF CYCLES AT 60 Hz
100
INSTANTANEOUS FORWARD CURRENT (A)
INSTANTANEOUS REVERSE CURRENT (μA)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS PER LEG
100
10
TJ=125°C 1
0.1 0
TJ=25°C
20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
1000
FIG. 4.