NCEP01T13

http://www.ncepower.com Pb Free Product NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =135A RDS(ON) <4.5mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Schematic diagram Marking and pin assignment Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP01T13 NCEP01T13 TO-220-3L - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit 100 ±20 Drain Current-Continuous (Silicon Limited) ID 150 Drain Current-Continuous (Package Limited) ID 135 Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range ID (100℃) IDM PD EAS TJ,TSTG 108 500 220 1.5 1156 -55 To 175 Quantity - U...