N-Channel Super Junction Power MOSFET
NCE60R1K2,NCE60R1K2D,NCE60R1K2F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use ...
Description
NCE60R1K2,NCE60R1K2D,NCE60R1K2F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
VDS@Tjmax RDS(ON) MAX ID
650 1200
4
V mΩ A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R1K2
TO-220
NCE60R1K2
NCE60R1K2D
TO-263
NCE60R1K2D
NCE60R1K2F
TO-220F
NCE60R1K2F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
VDS VGS ID (DC) ID (DC) IDM (pluse) PD
EAS IAR
EAR
NCE60R1K2 NCE60R1K2F
NCE60R1K2D
600 ±30 4 4* 2.5 2.5 12 12 46 28.5 0.37 0.23 130
2
0.2
Unit
V V A A A W W/°C...
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