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NCE60R1K2I Dataheets PDF



Part Number NCE60R1K2I
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description N-Channel Super Junction Power MOSFET
Datasheet NCE60R1K2I DatasheetNCE60R1K2I Datasheet (PDF)

NCE60R1K2I,NCE60R1K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving re.

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NCE60R1K2I,NCE60R1K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS@Tjmax RDS(ON) MAX ID 650 1200 4 V mΩ A Application ● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS) Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE60R1K2I TO-251 NCE60R1K2I NCE60R1K2K TO-252 NCE60R1K2K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V) VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) ID (DC) IDM (pluse) Maximum Power Dissipation(Tc=25℃) PD Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ,tAR limited by Tjmax (Note 1) EAS IAR EAR TO-251 TO-252 Value 600 ±30 4 2.5 12 46 0.37 130 2 0.2 Unit V V A A A W W/°C mJ A mJ Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.ncepower.com v1.0 NCE60R1K2I,NCE60R1K2K Parameter Drain Source voltage slope, VDS ≤480 V, Reverse diode dv/dt,VDS ≤480 V,ISD


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