NCE60R2K2K

NCE60R2K2I，NCE60R2K2K N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS@Tjmax RDS(ON) TYP ID 650 1.85 2 V Ω A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE60R2K2I TO-251 NCE60R2K2I NCE60R2K2K TO-252 NCE60R2K2K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) Symbol VDS VGS ID (DC) ID (DC) IDM (pluse) PD EAS IAR EAR TO-251 TO-252 Value 600 ±30 2 1.3 6 23 0.184 45 1 0.06 Unit V V A A A W W/°C mJ A mJ Wuxi NCE Power Semiconductor Co., Ltd Page 1 http://www.ncepower.com v1.0 NCE60R2K2I，NC...