N-Channel Super Junction Power MOSFET
NCE60R2K2I,NCE60R2K2K
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced s...
Description
NCE60R2K2I,NCE60R2K2K
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
VDS@Tjmax RDS(ON) TYP
ID
650 1.85
2
V Ω A
Application
● Power factor correction(PFC) ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R2K2I
TO-251
NCE60R2K2I
NCE60R2K2K
TO-252
NCE60R2K2K
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse) PD
EAS IAR
EAR
TO-251
TO-252
Value
600 ±30
2 1.3 6 23 0.184 45 1
0.06
Unit
V V A A A W W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com v1.0
NCE60R2K2I,NC...
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