NCE60R900

NCE60R900D，NCE60R900, NCE60R900F N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant VDS@Tjmax RDS(ON) ID 650 900 5 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE60R900D TO-263 NCE60R900D NCE60R900 TO-220 NCE60R900 NCE60R900F TO-220F NCE60R900F TO-263 TO-220 TO-220F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 480 V, ID =5 A, Tj = 125 °C Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) VDS VGS ID (DC) ID (DC) IDM (pluse) dv/dt PD EAS IAR NCE60R900 NCE60R900F NCE60R900D 600 ±30 5 5* 3 3* 15 15* 48 49 29 0.39 0.23 135 2.5 Unit V V A A A V/ns W W/...