NCE1512I

http://www.ncepower.com Pb Free Product NCE1512I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1512I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID =12A RDS(ON) <160mΩ @ VGS=10V (Typ:130mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation D G S Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits Marking and pin assignment TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package NCE1512I NCE1512I TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 150 ±20 12 50 55 -55 To 175 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 2.7 ℃/W Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE1512I Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body L...