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GBJ3510 Dataheets PDF



Part Number GBJ3510
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 35.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS
Datasheet GBJ3510 DatasheetGBJ3510 Datasheet (PDF)

GBJ3506 thru GBJ3510 ® Pb Free Plating Product GBJ3506 thru GBJ3510 Pb 35.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS Features • Glass passivated chip junction • Low forward voltage drop • High surge overload rating of 350 A peak • Ideal for printed circuit board Mechanical Data • Case: Molded plastic,GBJ(5S/6KBJ) • Epoxy: UL 94V-0 rate flame retardant • Terminals: Leads solderable per JESD22-B102, Meet JESD 201 class 2 whisker test • Mounting position: Any GBJ Dimensions in inches .

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GBJ3506 thru GBJ3510 ® Pb Free Plating Product GBJ3506 thru GBJ3510 Pb 35.0 AMPERE GLASS PASSIVATED FLAT BRIDGE RECTIFIERS Features • Glass passivated chip junction • Low forward voltage drop • High surge overload rating of 350 A peak • Ideal for printed circuit board Mechanical Data • Case: Molded plastic,GBJ(5S/6KBJ) • Epoxy: UL 94V-0 rate flame retardant • Terminals: Leads solderable per JESD22-B102, Meet JESD 201 class 2 whisker test • Mounting position: Any GBJ Dimensions in inches and (millimeters) 1.193(30.3) 1.169(29.7) HOLE FOR NO. 6 SCREW .189(4.8) .173(4.4) .106(2.7) .096(2.3) .094(2.4) .078(2.0) .043(1.1) .035(0.9) + ~~- .119 (0.5) .800(20.3) .697(17.7) .441(11.2) .425(10.8) .114(2.9) .165(4.2) .708(18.0) .098(2.5) .150(3.8) .669(17.0) .402(1.1) .386(0.9) .303(7.7) .287(7.3) .303(7.7) .287(7.3) .150(3.8) .134(3.4) .184(3.4) .122(3.1) .031(0.8) .023(0.6) Absolute Maximum Ratings and Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Rating for fusing (t<8.3ms) Maximum instantaneous forward voltage (Note 1) @ 17.5 A Maximum reverse current @ rated VR Typical thermal resistance (Note 2) TJ=25°C TJ=125°C Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: With idea heatsink SYMBOL VRRM VRMS VDC IF(AV) IFSM I2t VF GBJ3506 600 420 600 IR RθJC TJ TSTG GBJ3508 800 560 800 35 350 508 1.1 10 500 0.6 - 55 to +150 - 55 to +150 GBJ3510 1000 700 1000 UNIT V V V A A A2s V μA °C/W °C °C Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ GBJ3506 thru GBJ3510 ® RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 40 35 30 25 20 15 10 RESISTIVE OR INDUCTIVE LOAD 5 WITH HEATSINK 0 0 25 50 75 100 125 150 CASE TEMPERATURE (°C) INSTANTANEOUS REVERSE A CURRENT (μA) FIG. 3 TYPICAL REVERSE CHARACTERISTICS 100 10 TJ=125°C 1 0.1 0.01 0 TJ=25°C 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1000 FIG. 5 TYPICAL JUNCTION CAPACITANCE INSTANTANEOUS FORWARD A CURRENT (A) PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 350 300 8.3ms Single Half Sine Wave 250 200 150 100 50 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4 TYPICAL FORWARD CHARACTERISTICS 100 10 TJ=125°C 1 0.1 0 TJ=25°C 0.2 0.4 0.6 0.8 1 1.2 INSTANTANEOUS FORWARD VOLTAGE (V) 1.4 JUNCTION CAPACITANCE (pF) A 100 f=1.0MHz Vsig=50mVp-p 10 0.1 1 10 REVERSE VOLTAGE (V) 100 Rev.05 © 2006 Thinki Semiconductor Co., Ltd. Page 2/2 http://www.thinkisemi.com/ .


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