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RT3DKAM

Isahaya Electronics

SMALL-SIGNAL DIODE

〈SMALL-SIGNAL DIODE〉 RT3DKAM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON) D...


Isahaya Electronics

RT3DKAM

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Description
〈SMALL-SIGNAL DIODE〉 RT3DKAM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON) DESCRIPTION RT3DKAM is a super mini package plastic seal type silicon epitaxial type composite diode, built with Anode common MC2836 and Cathode common MC2838. Due to the small pin capacitance, short switching time(reverse recovery time),It is most suitable for high speed switching application and limitter,clipper application. OUTLINEDRAWING Unit:mm FEATURE ●Small pin capacitance ●Quick switching time ●High voltage ●Quadruple diodes and super mini package for mounting APPLICATION For general high speed switching of audio machine,VCR. Equivalent circuit MC2836 JEITA:SC-88 JEDEC:- MAXIMUM RATINGS(Ta=25℃) Symbol Parameter VRM VR I FSM I FM IO PT Tj Tstg Peak reverse voltage DC reverse voltage Surge current(1μs) Peak forward current Average rectification current Total allowance dissipation(Ta=25℃) Junction temperature Storage temperature Ratings 85 80 4 300 100 200 +150 -55~+150 Unit V V A mA mA mW ℃ ℃ MC2838 MARKING ⑥ ⑤ ④ DKA ● Type Name ①②③ ISAHAYA ELECTRONICS CORPORATION 〈SMALL-SIGNAL DIODE〉 RT3DKAM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON) ELECTRICAL CHARACTERISTICS MC2836 (Ta=25℃) Parameter Symbol Test conditions Forward voltage Reverse current Pin capacitance Reverse recovery time VF1 I F=10mA VF2 I F=50mA VF3 I F=100mA IR1 VR=75V IR2 VR=80V Ct VR=0V,f=1MHz trr (Refer to test circuit) Lim...




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