SMALL-SIGNAL DIODE
〈SMALL-SIGNAL DIODE〉
RT3DKAM
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON)
D...
Description
〈SMALL-SIGNAL DIODE〉
RT3DKAM
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON)
DESCRIPTION
RT3DKAM is a super mini package plastic seal type silicon epitaxial type composite diode, built with Anode common MC2836 and Cathode common MC2838.
Due to the small pin capacitance, short switching time(reverse recovery time),It is most suitable for high speed switching application and limitter,clipper application.
OUTLINEDRAWING
Unit:mm
FEATURE
●Small pin capacitance ●Quick switching time ●High voltage ●Quadruple diodes and super mini package for mounting
APPLICATION
For general high speed switching of audio machine,VCR.
Equivalent circuit MC2836
JEITA:SC-88 JEDEC:-
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
VRM VR I FSM I FM
IO
PT Tj Tstg
Peak reverse voltage
DC reverse voltage
Surge current(1μs)
Peak forward current Average rectification current
Total allowance dissipation(Ta=25℃)
Junction temperature
Storage temperature
Ratings 85 80 4 300
100
200 +150 -55~+150
Unit V V A mA
mA
mW ℃ ℃
MC2838
MARKING ⑥ ⑤ ④
DKA
●
Type Name ①②③
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL DIODE〉
RT3DKAM
FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(CATHODE COMMON、ANODE COMMON)
ELECTRICAL CHARACTERISTICS MC2836 (Ta=25℃)
Parameter
Symbol
Test conditions
Forward voltage
Reverse current Pin capacitance Reverse recovery time
VF1 I F=10mA VF2 I F=50mA VF3 I F=100mA IR1 VR=75V IR2 VR=80V Ct VR=0V,f=1MHz trr (Refer to test circuit)
Lim...
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