N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
SPR50N03
51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Pro...
Description
Elektronische Bauelemente
SPR50N03
51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR50N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
50N03
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size 13 inch
REF.
A B C D E F
Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2
1.27 BSC. 0.35 0.49 0.1 0.2
REF.
G H I J K L
Millimeter Min. Max. 0.8 1.0
0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref.
SD SD SD GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C
Pulsed Drain Current 2 Single Pulse Avalanche Energy 3
TA=70°C
VDS VGS
ID
IDM EAS
30 ±20 51 36 12 9.6 130 130
Avalanche Current Power Dissipation 4
TC=25°C
IAS PD
34 46
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max).
RθJA RθJC
62 2.7
Unit V V A A A A A mJ A W °C
°C / W °C / W
http...
Similar Datasheet