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NEW PRODUCT
Features
• Epitaxial Planar Die Construction • Complementary NPN Type Available (DXT2222A) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free by Design/RoHS Compliant (Note 1) • "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L • Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.072 grams
DXT2907A
PNP SURFACE MOUNT TRANSISTOR
3E C4 2 C
1B
TOP VIEW
SOT89-3L
COLLECTOR 2,4
1 BASE
3 EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Peak Collector Current
Symbol VCEO VCBO VEBO IC ICM
Value -60 -60 -5 -600 -800
Unit V V V mA mA
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range
Symbol PD RθJA
Tj, TSTG
Value 1
125 -55 to +150
Unit W
°C/W °C
Notes:
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf
DS30944 Rev. 5 - 2
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DXT2907A
© Diodes Incorporated
NEW PRODUCT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
Min
-60 -60 -5.0
Collector Cutoff Current
ICBO
⎯
Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4)
DC Current Gain
ICEX IEBO IBL
hFE
⎯ ⎯ ⎯
75 100 100 100 50
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
Base-Emitter Saturation Voltage
VBE(SAT)
SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance
Cobo Cibo
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
fT
ton td tr toff ts tf
Notes: 4. Short duration pulse test used to minimize self-heating effect.
⎯
⎯ ⎯ 200
⎯ ⎯ ⎯ ⎯ ⎯ ⎯
Max
⎯ ⎯ ⎯
-10
-50 -50 -50
⎯ ⎯ ⎯ 300 ⎯ -0.4 -1.6 -1.3 -2.6
8.0 30
⎯
45 10 40 100 80 30
Unit
V V V nA μA nA nA nA
⎯
V
V
pF pF MHz
ns ns ns ns ns ns
Test Condition
IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC =0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 150°C VCE = -30V, VEB(OFF) = -0.5V VEB = -5V, IC = 0 VCE = -30V, VEB(OFF) = -0.5V
IC = -100μA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA
VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz
VCC = -30V, IC = -150mA, IB1 = -15mA
VCC = -6.0V, IC = -150mA, IB1 =IB2 = -15mA
PD, POWER DISSIPATION (mW) -IC, COLLECTOR CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
0
-VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current as a Function of Collector Emitter Voltage
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DXT2907A
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-VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
NEW PRODUCT
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
-IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current 1.2
1
0.8
0.6
0.4
-IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current 1.2
IC/IB = 10
1
0.8
0.6
0.4
0.2 0.2
0 0.1 1 10 100 1000
-IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current 35
0 0.1 1 10 100 1000
-IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
500
fT, GAIN BANDWIDTH PRODUCT (MHz)
450 30
400
25 350
CAPACITANCE (pF)
300 20
250 15 200
10 150
100 5
50
0 0.1 1 10 100
VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics
0 0
DS30944 Rev. 5 - 2
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20 40 60 80
-IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
100
DXT2907A
© Diodes Incorporated
NEW PRODUCT
Ordering Information (Note 5)
Notes:
Device DXT2907A-13
Packaging SOT89-3L
5. For packaging details go to our website at http://www.diodes.com/ap2007.pdf.
Shipp.