DatasheetsPDF.com

DXT2907A Dataheets PDF



Part Number DXT2907A
Manufacturers Diodes
Logo Diodes
Description PNP SURFACE MOUNT TRANSISTOR
Datasheet DXT2907A DatasheetDXT2907A Datasheet (PDF)

NEW PRODUCT Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DXT2222A) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free by Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matt.

  DXT2907A   DXT2907A



Document
NEW PRODUCT Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DXT2222A) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free by Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) Mechanical Data • Case: SOT89-3L • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish - Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Marking & Type Code Information: See Page 4 • Ordering Information: See Page 4 • Weight: 0.072 grams DXT2907A PNP SURFACE MOUNT TRANSISTOR 3E C4 2 C 1B TOP VIEW SOT89-3L COLLECTOR 2,4 1 BASE 3 EMITTER Schematic and Pin Configuration Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Peak Collector Current Symbol VCEO VCBO VEBO IC ICM Value -60 -60 -5 -600 -800 Unit V V V mA mA Thermal Characteristics Characteristic Power Dissipation (Note 3) @ TA = 25°C Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C Operating and Storage Temperature Range Symbol PD RθJA Tj, TSTG Value 1 125 -55 to +150 Unit W °C/W °C Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf DS30944 Rev. 5 - 2 1 of 4 www.diodes.com DXT2907A © Diodes Incorporated NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO Min -60 -60 -5.0 Collector Cutoff Current ICBO ⎯ Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain ICEX IEBO IBL hFE ⎯ ⎯ ⎯ 75 100 100 100 50 Collector-Emitter Saturation Voltage VCE(SAT) ⎯ Base-Emitter Saturation Voltage VBE(SAT) SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Cobo Cibo Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time fT ton td tr toff ts tf Notes: 4. Short duration pulse test used to minimize self-heating effect. ⎯ ⎯ ⎯ 200 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ -10 -50 -50 -50 ⎯ ⎯ ⎯ 300 ⎯ -0.4 -1.6 -1.3 -2.6 8.0 30 ⎯ 45 10 40 100 80 30 Unit V V V nA μA nA nA nA ⎯ V V pF pF MHz ns ns ns ns ns ns Test Condition IC = -10μA, IE = 0 IC = -10mA, IB = 0 IE = -10μA, IC =0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = 150°C VCE = -30V, VEB(OFF) = -0.5V VEB = -5V, IC = 0 VCE = -30V, VEB(OFF) = -0.5V IC = -100μA, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 =IB2 = -15mA PD, POWER DISSIPATION (mW) -IC, COLLECTOR CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 0 -VCE, COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current as a Function of Collector Emitter Voltage DS30944 Rev. 5 - 2 2 of 4 www.diodes.com DXT2907A © Diodes Incorporated -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN NEW PRODUCT -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) -IC, COLLECTOR CURRENT (A) Fig. 3 Typical DC Current Gain vs. Collector Current 1.2 1 0.8 0.6 0.4 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 IC/IB = 10 1 0.8 0.6 0.4 0.2 0.2 0 0.1 1 10 100 1000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 35 0 0.1 1 10 100 1000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 500 fT, GAIN BANDWIDTH PRODUCT (MHz) 450 30 400 25 350 CAPACITANCE (pF) 300 20 250 15 200 10 150 100 5 50 0 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics 0 0 DS30944 Rev. 5 - 2 3 of 4 www.diodes.com 20 40 60 80 -IC, COLLECTOR CURRENT (mA) Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 100 DXT2907A © Diodes Incorporated NEW PRODUCT Ordering Information (Note 5) Notes: Device DXT2907A-13 Packaging SOT89-3L 5. For packaging details go to our website at http://www.diodes.com/ap2007.pdf. Shipp.


DXT2222A DXT2907A SP20100R


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)