MUR30010CT

Silicon Super Fast Recovery Diode Features High Surge Capability Types from 50 V to 200 V VRRM Not ESD Sensitive MUR30005CT thru MUR30020CTR VRRM = 50 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR30005CT(R) MUR30010CT(R) MUR30020CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MUR30005CT(R) MUR30010CT(R) MUR30020CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum reverse current at rated DC blocking voltage (per leg) Maximum reverse recovery time (per leg) Thermal characteristics Maximum thermal resistance, junction - case (per leg) IF(AV) IFSM VF IR Trr RΘJC TC = 125 °C tp = 8.3 ms, half sine IFM = 150 A, Tj = 25 °C Tj = 25 °C Tj = 125 °C IF=0.5 A, IR=1.0 A, IRR= 0.25 A 300 2750 1.0 25 3 100 0.40 300 2750 1.0 25 3 100 0.40 300 2750 1.0 25 3 100 0.40 A A V μA mA nS °C/W www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MUR30005CT thru MUR30020CTR www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ ...