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SSD9971 Dataheets PDF



Part Number SSD9971
Manufacturers SeCoS
Logo SeCoS
Description N-Ch Enhancement Mode Power MOSFET
Datasheet SSD9971 DatasheetSSD9971 Datasheet (PDF)

Elektronische Bauelemente SSD9971 25A, 60V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD9971 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD9971A meet the RoHS and Green Product requirement with full function reliability approved. TO-252(D-Pack) FEATURES Advanced h.

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Elektronische Bauelemente SSD9971 25A, 60V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD9971 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSD9971A meet the RoHS and Green Product requirement with full function reliability approved. TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 9971 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch 1 Gate 2 Drain 3 Source A B GE K HF MJ C D N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.90 J 2.336 REF. B 4.95 5.53 K 0.89 REF. C 2.10 2.50 M 0.45 1.14 D 0.665 Typ. N 1.55 Typ. E 6.0 7.5 O 0 0.13 F 2.90 REF P 0.58 REF. G 5.40 6.40 H 0.60 1.20 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current @VGS=10V 1 Pulsed Drain Current 2 TC=25°C TC=100°C ID IDM Total Power Dissipation 1 TC=25°C TA=25°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 Maximum Thermal Resistance from Junction to Ambient RθJA Maximum Thermal Resistance from Junction to Case 1 RθJC Rating 60 ±20 25 16 50 39 2 -55~+150 62.5 110 3.2 Unit V V A A W °C °C / W http://www.SeCoSGmbH.com/ 24-Mar-2017 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SSD9971 25A, 60V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Drain-Source Breakdown Voltage BVDSS 60 - - Gate-Threshold Voltage VGS(th) 1 - 2.5 Drain-Source Leakage Current IDSS - -1 - 25 Gate-Source Leakage Current IGSS - - ±100 Forward Transfer conductance gfs - 10 - Static Drain-Source On-Resistance 3 RDS(ON) - 27 36 31 45 Total Gate Charge @VGS=4.5V Qg - 12.5 - Total Gate Charge Qg - 18 - Gate-Source Charge Qgs - 5 - Gate-Drain (“Miller”) Charge Qgd - 6 - Turn-on Delay Time Td(on) - 7 - Turn-on Rise Time Tr - 9 - Turn-off Delay Time Td(off) - 23 - Turn-off Fall Time Tf - 6 - Input Capacitance Ciss - 1572 - Output Capacitance Coss - 58 - Reverse Transfer Capacitance Diode Forward Voltage 3 Continuous Source Current 1 Pulsed Source Current 2 Reverse Recovery Time Crss - 39 Source-Drain Diode VSD - - IS - - ISM - - Trr - 37 - 1.2 25 50 - Reverse Recovery Charge Qrr - 38 Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The power dissipation is limited by 150°C junc tion temperature 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% - Unit Test Condition V VGS=0V, ID=250µA V VDS=VGS, ID=25.


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