Document
Elektronische Bauelemente
SSD9971
25A, 60V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD9971 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSD9971A meet the RoHS and Green Product requirement with full function reliability approved.
TO-252(D-Pack)
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
9971
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size 13 inch
1
Gate
2
Drain
3
Source
A B
GE
K HF MJ
C D
N O P
REF.
Millimeter Min. Max.
REF.
Millimeter Min. Max.
A 6.35 6.90 J
2.336 REF.
B 4.95 5.53 K
0.89 REF.
C 2.10 2.50 M 0.45 1.14
D 0.665 Typ. N
1.55 Typ.
E 6.0 7.5 O 0
0.13
F 2.90 REF P
0.58 REF.
G 5.40 6.40
H 0.60 1.20
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current @VGS=10V 1 Pulsed Drain Current 2
TC=25°C TC=100°C
ID IDM
Total Power Dissipation 1
TC=25°C TA=25°C
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient 1 Maximum Thermal Resistance from Junction to Ambient
RθJA
Maximum Thermal Resistance from Junction to Case 1
RθJC
Rating 60 ±20 25 16 50 39 2
-55~+150
62.5 110 3.2
Unit V V A A W °C
°C / W
http://www.SeCoSGmbH.com/
24-Mar-2017 Rev. B
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SSD9971
25A, 60V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage
BVDSS
60
-
-
Gate-Threshold Voltage
VGS(th)
1
- 2.5
Drain-Source Leakage Current
IDSS
-
-1 - 25
Gate-Source Leakage Current
IGSS
-
- ±100
Forward Transfer conductance
gfs - 10 -
Static Drain-Source On-Resistance 3 RDS(ON)
-
27 36 31 45
Total Gate Charge @VGS=4.5V
Qg - 12.5 -
Total Gate Charge
Qg - 18 -
Gate-Source Charge
Qgs - 5 -
Gate-Drain (“Miller”) Charge
Qgd - 6 -
Turn-on Delay Time
Td(on)
-
7
-
Turn-on Rise Time
Tr - 9 -
Turn-off Delay Time
Td(off)
-
23
-
Turn-off Fall Time
Tf - 6 -
Input Capacitance
Ciss - 1572 -
Output Capacitance
Coss - 58 -
Reverse Transfer Capacitance
Diode Forward Voltage 3 Continuous Source Current 1 Pulsed Source Current 2 Reverse Recovery Time
Crss - 39
Source-Drain Diode
VSD -
-
IS - -
ISM -
-
Trr - 37
-
1.2 25 50 -
Reverse Recovery Charge
Qrr - 38
Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2. The power dissipation is limited by 150°C junc tion temperature 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
-
Unit Test Condition V VGS=0V, ID=250µA V VDS=VGS, ID=25.