MOSFET
RJK5014DPP-E0
500V - 19A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.325 typ. (at ID...
Description
RJK5014DPP-E0
500V - 19A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 0.325 typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)
Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP)
G
1 23
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation
VDSS
VGSS
IDNote4
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
IAPNote3
EARNote3
Pch Note2
Channel to case thermal impedance
ch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Preliminary Datasheet
R07DS0607EJ0100 Rev.1.00
Feb 03, 2012
D
1. Gate 2. Drain 3. Source
S
Ratings 500 ±30 19 38 19 38 4 0.88 35 3.57 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A A mJ W
C/W C C
R07DS0607EJ0100 Rev.1.00 Feb 03, 2012
Page 1 of 6
RJK5014DPP-E0
Preliminary
Electrical Characteristics
Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source ...
Similar Datasheet
- RJK5014DPP-E0 MOSFET - Renesas