RJK5014DPP-E0

RJK5014DPP-E0 500V - 19A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.325  typ. (at ID = 9.5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) G 1 23 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation VDSS VGSS IDNote4 ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance ch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C 3. STch = 25C, Tch  150C 4. Limited by maximum safe operation area Preliminary Datasheet R07DS0607EJ0100 Rev.1.00 Feb 03, 2012 D 1. Gate 2. Drain 3. Source S Ratings 500 ±30 19 38 19 38 4 0.88 35 3.57 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W C/W C C R07DS0607EJ0100 Rev.1.00 Feb 03, 2012 Page 1 of 6 RJK5014DPP-E0 Preliminary Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source ...