DatasheetsPDF.com

1SS181

DIODE

Description

RoHS 1SS181 SOT-23 Plastic-Encapsulate DIODE Features DPower dissipation PD : 150 mW (Tamb=25oC) TForward Current .,LIF : 100 mA Reverse Voltage VR : 80V Operating and storage junction temperature range OTj, Tstg : -55 oC to +150oC 1 1. 2.4 1.3 SOT-23 3 2 NIC CMarking:A3 2.9 1.9 0.95 0.95 0.4 Unit:mm TROELECTRICAL CHARACTERISTICS o (Ta=25 C unless ot...

WEJ

Download 1SS181 Datasheet

Similar Datasheet

1SS101 SUPER HIGH SPEED SWITCHING DIODE - XIN SEMICONDUCTOR
1SS101 Mixer Diode - NEC
1SS104 SILICON DIODE - Toshiba Semiconductor
1SS106 Silicon Schottky Barrier Diode - Hitachi Semiconductor
1SS106 SILICON SCHOTTKY BARRIER DIODE - SEMTECH
1SS106 Silicon Schottky Barrier Diode - Renesas
1SS106 SMALL SIGNAL SCHOTTKY DIODES - JINAN JINGHENG ELECTRONICS
1SS108 Silicon Schottky Barrier Diode - Hitachi Semiconductor
1SS110 Silicon Diode - Hitachi Semiconductor
1SS110 Switching Diode - Leshan Radio Company

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)