DIODE
RoHS 1N6263W
DFeatures
· Low Forward Voltage Drop
T· Guard Ring Construction for Transient Protection
.,L· Fast Switchi...
Description
RoHS 1N6263W
DFeatures
· Low Forward Voltage Drop
T· Guard Ring Construction for Transient Protection
.,L· Fast Switching Time
· Low Reverse Capacitance · Surface Mount Package Ideally Suited for
OAutomatic Insertion
1.6
SOD-123
2.70 3.70
1.05
0.55
IC CMaximum Ratings @ TA = 25°C unless otherwise specified
NCharacteristic
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage
ODC Blocking Voltage
RMS Reverse Voltage
RForward Continuous Current
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
T@ t = 10ms
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
COperating and Storage Temperature Range
Symbol VRRM
VRWM
VR VR(RMS)
IF
IFSM
Pd RqJA Tj, TSTG
1N6263W
60
42 15 50 2.0 400 375 -65 to +175
Unit
V
V mA mA A mW K/W °C
EElectrical Characteristics @ TA = 25°C unless otherwise specified
LCharacteristic EReverse Breakdown Voltage (Note 2)
Reverse Leakage Current Forward Voltage Drop
JJunction Capacitance EReverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
V(BR)R
60
¾
¾
V IR = 10mA
IRM ¾
¾ 200 nA VR = 50V
VFM
¾
¾
0.41 1.0
V
IF = 1.0mA IF = 15mA
Cj ¾ 2.0 ¾ pF VR = 0V, f = 1.0MHz
trr
¾ 1.0 ¾
ns
IF = IR = 5.0mA Irr = 0.1 x IR, RL = 100W
WNote: 1. Valid provided that terminals from the case are maintained at ambient temperature.
2. Test period <3000ms.
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
RoHS 1N6263W
E A1 A2
0.20 cb
D
O.,LTDE1 IC CL
L1
A
CTRONSymbol EA
A1
LA2
b
Ec
D
JE E1...
Similar Datasheet