AOU7S60

AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 33A 0.6Ω 8.2nC 1.9µJ TO252 DPAK Top View Bottom View D D TO251 Top View Bottom View S G AOD7S60 G S S D G AOU7S60 S DG G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H ID IDM IAR EAR EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Maximum 600 ±30 7 5 33 1.7 43 86 83 0.7 100 20 -55 to 150 300 Typical 45 -1.2 Maximum 55 0.5 1.5 D S Units V V A A mJ mJ W W/ oC V/ns °C °C Uni...