AOI7N60

AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 700V@150℃ 7A < 1.3Ω Top View TO252 DPAK Bottom View Top View TO251A IPAK Bottom View D D S G AOD7N60 G S S D G AOI7N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL G D S Maximum 600 ±30 7 4.5 24 3.6 194 388 5 178 1.4 -50 to 150 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Typical 45 0.5 Maximum 55 0.5 0.7 G D S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 0: Feb 2012 www.aosm...