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3DG101
Silicon NPN high frequency low power transistor
Description
3DG101
NPN
PCM ICM Tjm Tstg V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VBEsat VCEsat hFE fT ICB=0.1mA ICE=0.1mA IEB=0.1mA VCB=10V VCE=10V VEB=1.5V IC=10mA IB=1mA VCE=10V IC=0.5mA VCE=10V IC=3mA fo=100MH z A ≥20 ≥15 BC 100 20 175 -55~150 ≥30 ≥40 ≥20 ≥30 ≥4.0 ≤0.03 ≤0.05 ≤0.01 ≤1.0 ≤0.35 30~270 ≥150 D mW mA ℃ ℃ ≥50 V ≥40 V V μA μA μA V M...
ETC
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