DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2488
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2488...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2488
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2488 is N-Channel MOS Field Effect
Transistor designed
for high voltage switching applications.
FEATURES Low On-Resistance
RDS (on) = 1.2 Ω (VGS = 10 V, ID = 5.0 A)
Low Ciss Ciss = 2 900 pF TYP. High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±10
A
Drain Current (pulse)*
ID (pulse) ±20
A
Total Power Dissipation (Tc = 25 ˚C) PT1 150 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 10 A
Single Avalanche Energy**
EAS 294 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
19 MIN. 3.0±0.2
20.0±0.2 6.0 1.0
PACKAGE DIMENSIONS (in millimeter)
15.7 MAX. 3.2±0.2 4
4.7 MAX. 1.5
7.0
4.5±0.2
123
2.2±0.2 5.45
1.0±0.2 0.6±0.1 2.8±0.1 5.45
1. Gate 2. Drain 3. Source 4. Fin (Drain)
MP-88
Drain
Gate
Body Diode
Source
Document No. D10284EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan
© 1995
2SK2488
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitanc...