K2488

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2488 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2488 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES Low On-Resistance RDS (on) = 1.2 Ω (VGS = 10 V, ID = 5.0 A) Low Ciss Ciss = 2 900 pF TYP. High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID (DC) ±10 A Drain Current (pulse)* ID (pulse) ±20 A Total Power Dissipation (Tc = 25 ˚C) PT1 150 W Total Power Dissipation (TA = 25 ˚C) PT2 3.0 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 10 A Single Avalanche Energy** EAS 294 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 19 MIN. 3.0±0.2 20.0±0.2 6.0 1.0 PACKAGE DIMENSIONS (in millimeter) 15.7 MAX. 3.2±0.2 4 4.7 MAX. 1.5 7.0 4.5±0.2 123 2.2±0.2 5.45 1.0±0.2 0.6±0.1 2.8±0.1 5.45 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 Drain Gate Body Diode Source Document No. D10284EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2488 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitanc...