DatasheetsPDF.com

CFTVS3V3B

Central Semiconductor

SURFACE MOUNT SILICON BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR

CFTVS3V3B SURFACE MOUNT SILICON BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR w w w. c e n t r a l s e m i . c o m DESCRI...


Central Semiconductor

CFTVS3V3B

File Download Download CFTVS3V3B Datasheet


Description
CFTVS3V3B SURFACE MOUNT SILICON BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFTVS3V3B is a low leakage, fast response, bi-directional TVS in the space saving SOD-882 surface mount package. This device is designed to protect sensitive equipment connected to high speed data lines against ESD damage. SOD-882 CASE MARKING CODE: 3 APPLICATIONS: Data line protection User interface protection Charging/power port protection FEATURES: Space saving SOD-882 package Low leakage current MAXIMUM RATINGS: (TA=25°C) Peak Power Dissipation (8x20μs) ESD Voltage (IEC 61000-4-2, Air) ESD Voltage (IEC 61000-4-2, Contact) Operating Junction Temperature Storage Temperature SYMBOL PPK VESD VESD TJ Tstg 40 30 30 -55 to +125 -55 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C) Maximum Reverse Stand-off Voltage Minimum Breakdown Voltage Test Current Maximum Reverse Leakage Current VRWM VBR @ IT IT IR @ VRWM V V μA μA Maximum Clamping Voltage (8x20μs) VC @ IPP V 6.5 3.3 3.5 2.0 0.5 8.0 Notes: (1) Transmission Line Pulse (TLP) conditions: Z0=50Ω, tp=100ns Typical Clamping Voltage TLP (Note 1) VC @ IPP V 5.0 6.0 Peak Pulse Current IPP A 1.0 5.0 UNITS W kV kV °C °C Typical Dynamic Resistance (Note 1) RDYN Ω Maximum Junction Capacitance @ 0V Bias CJ pF 0.25 10 R7 (2-April 2015) CFTVS3V3B SURFACE MOUNT SILICON BI-DIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SOD-882 CASE - MECHANICAL OUTLINE w w w. c e...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)