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2SC5751 Dataheets PDF



Part Number 2SC5751
Manufacturers Renesas
Logo Renesas
Description NPN SILICON RF TRANSISTOR
Datasheet 2SC5751 Datasheet2SC5751 Datasheet (PDF)

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5751 2SC5751-T2 Quantity 50 pcs (Non r.

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DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package ORDERING INFORMATION Part Number 2SC5751 2SC5751-T2 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC P Note tot Tj Tstg Ratings 9.0 6.0 2.0 50 205 150 −65 to +150 Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Unit V V V mA mW °C °C Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P15657EJ1V0DS00 (1st edition) Date Published August 2001 NS CP(K) Printed in Japan © 2001 2SC5751 THERMAL RESISTANCE Parameter Junction to Ambient Resistance Symbol R Note th j-a Value 600 Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Unit °C/W ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Symbol Test Conditions DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA Emitter Cut-off Current DC Current Gain IEBO h Note 1 FE VBE = 1 V, IC = 0 mA VCE = 3 V, IC = 20 mA RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 20 mA, f = 2 GHz Insertion Power Gain S21e2 VCE = 3 V, IC = 20 mA, f = 2 GHz Noise Figure NF VCE = 3 V, IC = 5 mA, f = 2 GHz, ZS = Zopt Reverse Transfer Capacitance C Note 2 re VCB = 3 V, IE = 0 mA, f = 1 MHz Maximum Available Power Gain MAG Note3 VCE = 3 V, IC = 20 mA, f = 2 GHz Linear Gain GL VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Pin = −10 dBm Gain 1 dB Compression Output Power PO (1 dB) VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Pin = 1 dBm Collector Efficiency ηC VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Pin = 1 dBm MIN. − − 75 − 10.0 − − − − − − TYP. − − 120 15.0 13.5 1.7 0.22 16.0 15.5 15.0 50 MAX. 100 100 150 − − 2.5 0.5 − − − − Unit nA nA − GHz dB dB pF dB dB dBm % Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded 3. MAG = S21 (K – √ (K2 – 1) ) S12 hFE CLASSIFICATION Rank Marking hFE Value FB R54 75 to 150 2 Data Sheet P15657EJ1V0DS 2SC5751 Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) 250 205 200 150 100 REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 f = 1 MHz 0.4 0.3 0.2 50 0.1 Collector Current IC (mA) 0 25 50 75 100 125 150 Ambient Temperature TA (˚C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 3 V 10 1 0.1 0.01 0.001 0.0001 0.5 1 000 0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V) 1.0 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V Collector Current IC (mA) 0 123 45 6 Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 60 500 µA 50 400 µA IB : 50 µA step 40 300 µA 30 200 µA 20 100 µA 10 IB = 50 µA 0 12345678 Collector to Emitter Voltage VCE (V) 100 DC Current Gain hFE 10 0.1 1 10 Collector Current IC (mA) 100 Data Sheet P15657EJ1V0DS 3 Gain Bandwidth Product fT (GHz) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 15 VCE = 3 V f = 2 GHz 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 25 VCE = 3 V f = 1 GHz 20 MSG MAG |S21e|2 15 10 5 0 1 10 100 Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 25 VCE = 3 V f = 2.5 GHz 20 15 MAG 10 |S21e|2 5 0 1 10 100 Collector Current IC (mA) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB) 2SC5751 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 35 VCE = 3 V 30 MSG IC = 20 mA MAG 25 20 15 |S21e|2 10 5 0 0.1 1 Frequency f (GHz) 10 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT .


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