Document
DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5751
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gold electrodes • Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number 2SC5751 2SC5751-T2
Quantity 50 pcs (Non reel) 3 kpcs/reel
Supplying Form • 8 mm wide embossed taping • Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative. Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC P Note
tot
Tj Tstg
Ratings 9.0 6.0 2.0 50 205 150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit V V V mA
mW °C °C
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P15657EJ1V0DS00 (1st edition) Date Published August 2001 NS CP(K) Printed in Japan
©
2001
2SC5751
THERMAL RESISTANCE
Parameter Junction to Ambient Resistance
Symbol R Note
th j-a
Value 600
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit °C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
DC Characteristics
Collector Cut-off Current
ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current DC Current Gain
IEBO h Note 1
FE
VBE = 1 V, IC = 0 mA VCE = 3 V, IC = 20 mA
RF Characteristics
Gain Bandwidth Product
fT VCE = 3 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 20 mA, f = 2 GHz
Noise Figure
NF VCE = 3 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
Reverse Transfer Capacitance
C Note 2 re
VCB = 3 V, IE = 0 mA, f = 1 MHz
Maximum Available Power Gain
MAG Note3 VCE = 3 V, IC = 20 mA, f = 2 GHz
Linear Gain
GL VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Pin = −10 dBm
Gain 1 dB Compression Output Power PO (1 dB) VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Pin = 1 dBm
Collector Efficiency
ηC VCE = 2.8 V, ICq = 8 mA, f = 1.8 GHz, Pin = 1 dBm
MIN.
− − 75
− 10.0
− − − − − −
TYP.
− − 120
15.0 13.5 1.7
0.22 16.0 15.5
15.0
50
MAX.
100 100 150
− − 2.5
0.5 − − − −
Unit
nA nA −
GHz dB dB
pF dB dB
dBm
%
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded
3. MAG = S21 (K – √ (K2 – 1) ) S12
hFE CLASSIFICATION
Rank Marking hFE Value
FB R54 75 to 150
2 Data Sheet P15657EJ1V0DS
2SC5751
Reverse Transfer Capacitance Cre (pF)
Total Power Dissipation Ptot (mW)
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
300 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) )
250
205
200
150
100
REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE
0.5 f = 1 MHz
0.4
0.3
0.2
50 0.1
Collector Current IC (mA)
0 25 50 75 100 125 150 Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 VCE = 3 V
10
1
0.1
0.01
0.001 0.0001
0.5
1 000
0.6 0.7 0.8 0.9 Base to Emitter Voltage VBE (V)
1.0
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 3 V
Collector Current IC (mA)
0 123 45 6 Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
60 500 µA
50
400 µA IB : 50 µA step
40 300 µA
30 200 µA
20 100 µA
10 IB = 50 µA
0 12345678
Collector to Emitter Voltage VCE (V)
100
DC Current Gain hFE
10 0.1
1 10 Collector Current IC (mA)
100
Data Sheet P15657EJ1V0DS
3
Gain Bandwidth Product fT (GHz)
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
15 VCE = 3 V f = 2 GHz
10
5
0 1 10 100 Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
25 VCE = 3 V f = 1 GHz
20
MSG
MAG
|S21e|2 15
10
5
0 1 10 100 Collector Current IC (mA)
INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT
25 VCE = 3 V f = 2.5 GHz
20
15 MAG
10 |S21e|2 5
0 1 10 100 Collector Current IC (mA)
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
2SC5751
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
35 VCE = 3 V
30 MSG
IC = 20 mA
MAG
25
20
15 |S21e|2
10
5
0 0.1 1
Frequency f (GHz)
10
INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT
.