RT5N140C

PRELIMINARY RT5N140C Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING RT5N140C is a one chip transistor with built-in bias 2.8 0.65 1.5 0.65 resistor, PNP type is RT5P140C. Unit: mm 2.8 1.90 0.95 0.95 0.4 FEATURE Built-in bias resistor （R1=10kΩ） High collector current （Ic=0.5A） Mini package for easy mounting ① ②③ APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 1.1 0.8 0～0.1 0.13 R1 B (IN) C JEITA：SC-59 (OUT) JEDEC：Similar to TO-236 Terminal Connector ①：BASE E (GND) ②：EMITTER ③：COLLECTOR MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature RATING 50 5 50 500 200 ＋150 -55～＋150 UNIT V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) SYMBOL PARAMETER ＶCBO ＶCEO ＶEBO ICBO IEBO VCE(sat) GI R1 fT C to B break down voltage C to E break down voltage E to B break down voltage Collector cut off current Emitter cut off current C to E saturation voltage DC forward current gain Input resistor Gain band width product TEST CONDITION IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=50mA，IB=2.5mA VCE=5V，IE=50mA ― VCE=10V，IE=-50mA，f=100MHz MARKING N.B MIN 50 50 5 ― ― ― 100 7 ― LIMIT TYP ― ― ― ― ― ― 250 10 200 MAX ― ― ― 0.5 0.5 0.3 600 13 ― UNIT V V V μA μA V ― kΩ MHz ISAHAYA ELECTRONICS CORPORATIO...