RT1N137S

RT1N137S Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type DESCRIPTION RT1N137S is a one chip transistor with built-in bias resistor, NPN type is RT1P137S. OUTLINE DRAWING 4.0 Unit: mm 7.5MAX 14.0 13.0MIN 3.0 1.0 1.0 FEATURE Built-in bias resistor （R1=1kΩ, R2=22kΩ） High collector current （Ic=1A） Low VCE(sat) VCE(sat)=0.3V (@Ic=300mA/IB=3mA) APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit 2.5 0.1 0.45 2.5 2.5 ①②③ 0.4 R1 B (IN) R2 C (OUT) E (GND) JEITA：－ JEDEC：－ Terminal Connector ①：EMITTER ②：COLLECTOR ③：BASE MAXIMUM RATING (Ta=25℃) SYMBOL VCBO VEBO VCEO IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Junction temperature Storage temperature RATING 40 6 40 1 2 600 150 -55～＋150 ELECTRICAL CHARACTERISTICS (Ta=25℃) UNIT V V V A A mW ℃ ℃ SYMBOL V(BR)CEO ICBO IEBO hFE VCE(sat) VI(ON) VI(OFF) R1 R2／R1 fT PARAMETER C to E breakdown voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product TEST CONDITION IC=1mA，RBE=∞ VCB=40V，IE =0 VEB=5V，IC =0 VCE=6V，IC =100mA IC =300mA，IB =3mA VCE=0.2V，IC =300mA VCE=5V，IC =100μA － － VCE=6V，IE =-10mA MARKING N13 7 □□ type name Lot № MIN LIMIT TYP MAX UNIT 40 － － V － － -0.1 μA 168 217 310 μA 100 － －－ ...