ISA1283AS1

〈SMALL-SIGNAL TRANSISTOR〉 ISA1283AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION ISA1283AS1 is a silicon PNP epitaxial type transistor designed for relay drive or power supply application. Complementary with 2SC5482. FEATURE ●High voltage VCEO=-60V ●High collector current. IC=-1A ●Low collector saturation voltage. VCE(sat)=-0.11V typical (@IC=-500mA, IB=-25mA) ●High collector dissipation. PC=600mW OUTLINE DRAWING 4.0 14.0 13.0MIN 3.0 1.0 1.0 0.1 0.45 2.5 2.5 7.5MAX Unit：ｍｍ 0.4 2.5 APPLICATION Audio equipment, VCR, relay drive, power supply, etc. ①②③ MAXI.MUM RATINGS（Ta=25℃） Symbol VCBO VEBO VCEO IC ICM Pc Tj Tstg Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak collector current Collector dissipation Junction temperature Storage temperature Ratings -60 -6 -60 -1 -2 600 +150 -55～+150 Unit V V V A A mW ℃ ℃ JEITA： JEDEC： TERMINAL CONNECTER ①：EMITTER ②：COLLECTOR ③：BASE ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Parameter Test conditions V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO hFE※ VCE(sat) fT Cob C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E Saturation Voltage Gain band width product Collector output capacitance IC= -10μA , IE =0mA IE= -10μA , IC =0mA IC= -2mA , RBE= ∞ V CB= -50V , I E= 0mA V EB= -4V , I C= 0mA V CE = -4V , IC= -0.1A I C= -500mA ...