INC6006AC1

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. DESCRIPTION INC6006AC1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for easy mounting. ・High voltage VCEO = 160V ・Low voltage VCE(sat) = 0.2V(MAX) ・Complementary ： INA6006AC1 APPLICATION High voltage switching. 2.8 1.90 0.95 0.95 0.4 INC6006AC1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 2.8 0.65 1.5 0.65 UNIT：mm ① ②③ 1.1 0.8 0～0.1 0.13 Terminal Connector ①：Base ②：Emitter ③：Collector JEITA:SC-59 JEDEC: Similar to TO-236 MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I CM Peak collector current I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature *Mounted on glass epoxy board(46mm×19mm×1mm) ELECTRICAL CHARACTERISTICS（Ta=25℃） RATING 180 6 160 200 100 200 500（*） ＋150 -55～＋150 UNIT V V V mA mA mW ℃ ℃ SYMBOL PARAMETER TEST CONDITIONS V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO ｈＦＥ1 ｈＦＥ2 ｈＦＥ3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain1 DC forward current gain2 DC forward current gain3 C to E saturation voltage1 C to E saturation voltage2 B to E saturation voltage1 B to E saturation voltage2 Gain bandwidth p...