INC5003AH1 Datasheet

INC5003AH1 TRANSISTOR

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. FEATURE Linearity of hFE is good Low voltage VCE(sat) = 250mV(MAX),Ic=2A Complementary INA5003AH1 INC5003AH1 SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 6.60 5.34 UNIT：ｍｍ 2.30 0.50 0.83 2.74 .

Features

wn voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain VCE(sat) C to E saturation voltage VBE(sat) fT Cob ton tstg tf B to E saturation voltage Gain band width product Collector output capacitance Turn on time Storage time Fall time Ic=100uA Ic=10mA IE=100uA VCB=120V VEB=6V VCE=1V, Ic=2A VCE=1V, Ic=5A IC=2A, IB=100mA IC=6A, IB=300mA IC=6A, IB=300mA VCE=10V, IE=-100mA VCB=10V, IE=0A, f=1MHz IC=3A, IB1=-IB2=0.15A VCC=30V, RL=10Ω VBB=7.5V RATING 150 60 6 6 10 1 10 ＋150 -55～＋150 UNIT V V V A A W W ℃ ℃ LIMITS MIN TYP MAX 150 - - 60 - .