SiC HALF BRIDGE
MIL-PRF-38534 AND 38535 CERTIFIED FACILITY
1200V/100A
M.S.KENNEDY CORP.
SiC HALF BRIDGE
4707 Dey Road Liverpool, N.Y...
Description
MIL-PRF-38534 AND 38535 CERTIFIED FACILITY
1200V/100A
M.S.KENNEDY CORP.
SiC HALF BRIDGE
4707 Dey Road Liverpool, N.Y. 13088
FEATURES:
PEM
Half Bridge Configuration Silicon Carbide Mosfet Provides Ultra Fast Switching Silicon Carbide Diode Provides Near Zero Recovery 1200V Rated Voltage 100A Continuous Output Current Internal Zener Clamps on Gates HI-REL Screening Available (Modified 38534) Light Weight Domed AISiC Baseplate Robust Mechanical Design for Hi-Rel Applications Ultra-Low Inductance Internal Layout Withstands 96 Hours HAST and Thermal Cycling (-55°C to +125°C) Contact MSK for MIL-PRF-38534 (Modified) Qualification Status
4804
(315) 701-6751
DESCRIPTION:
The MSK 4804 is one of a family of plastic encapsulated modules (PEM) developed specifically for use in military, aerospace and other severe environment applications. The SiC(Silicon Carbide) technology has superior switching performance compared to Si-Based modules. The half bridge configuration and 1200V/100A rating make it ideal for use in high current motor drive and inverter applications. The Aluminum Silicon Carbide (AlSiC) baseplate offers superior flatness and light weight; far better than copper or copper alloys found in most high power plastic modules. The high thermal conductivity materials used to construct the MSK 4804 allow high power outputs at elevated baseplate temperatures.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
Motor Drives Inverters
1
8548-101 Rev. D 4/13
ABSOLUTE MAXIMUM RATING 8
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