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V12W60C-M3
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 3 A
TMBS®
TO-252 (D-PAK)
K
A
A V12W60C
AK A HEATSINK
FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 6 A (TA = 125 °C) TJ max. Package
2x6A 60 V 90 A 0.47 V
150 °C TO-252 (D-PAK)
Diode variation
Dual common cathode
MECHANICAL DATA
Case: TO-252 (D-PAK) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device per diode
VRRM IF(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
Operating junction and storage temperature range
TJ, TSTG
V12W60C 60 12 6
90
-40 to +150
UNIT V A
A °C
Revision: 04-Dec-13
1 Document Number: 89972
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
V12W60C-M3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 3 A IF = 6 A IF = 3 A IF = 6 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms
TA = 25 °C
TA = 125 °C TA = 25 °C TA = 125 °C
VF (1) IR (2)
TYP.
0.47 0.52 0.38 0.47
9
MAX.
0.62
0.58 3500 27
UNIT
V
μA mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V12W60C
Typical thermal resistance
per diode per device
RJC
2.8 1.4
per device
RJA (1) (2)
65
Notes
(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, without heatsink
UNIT °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
V12W60C-M3/I
0.38
PACKAGE CODE I
BASE QUANTITY 2500/reel
DELIVERY MODE 13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Rectified Current (A) Average Power Loss (W)
14
12 RthJA=RthJC=1.4oC/W
10
8
6
TA , RthJA=65oC/W
4
2
0 0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0
0
D = 0.5 D = 0.3 D = 0.2 D = 0.1
D = 0.8 D = 1.0
T
D = tp/T
tp
123456
Average Forward Current (A)
7
Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 04-Dec-13
2 Document Number: 89972
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
100
Instantaneous Forward Current (A)
10 TA = 150 °C TA = 125 °C
1 TA = 100 °C TA = 25 °C
0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Instantaneous Reverse Current (mA)
100
10 TA = 150 °C TA = 125 °C
1 TA = 100 °C
0.1
0.01
TA = 25 °C
0.001 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
V12W60C-M3
Vishay General Semiconductor
10 000 1000
TJ = 25 °C f = 1.0 MHz
Vsig = 50 mVp-p
100
10 0.1
1 10
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
10 Junction to Case
1
0.1 0.01
0.1 1 10
t - Pulse Duration (s)
100
Fig. 6 - Typical Transient Thermal Impedance Per Device
Revision: 04-Dec-13
3 Document Number: 89972
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
V12W60C-M3
Vishay General Se.