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V12W60C-M3 Dataheets PDF



Part Number V12W60C-M3
Manufacturers Vishay
Logo Vishay
Description Dual Trench MOS Barrier Schottky Rectifier
Datasheet V12W60C-M3 DatasheetV12W60C-M3 Datasheet (PDF)

www.vishay.com V12W60C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A TMBS® TO-252 (D-PAK) K A A V12W60C AK A HEATSINK FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLI.

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www.vishay.com V12W60C-M3 Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A TMBS® TO-252 (D-PAK) K A A V12W60C AK A HEATSINK FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 6 A (TA = 125 °C) TJ max. Package 2x6A 60 V 90 A 0.47 V 150 °C TO-252 (D-PAK) Diode variation Dual common cathode MECHANICAL DATA Case: TO-252 (D-PAK) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode VRRM IF(AV) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM Operating junction and storage temperature range TJ, TSTG V12W60C 60 12 6 90 -40 to +150 UNIT V A A °C Revision: 04-Dec-13 1 Document Number: 89972 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com V12W60C-M3 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Instantaneous forward voltage per diode IF = 3 A IF = 6 A IF = 3 A IF = 6 A Reverse current per diode VR = 60 V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C VF (1) IR (2) TYP. 0.47 0.52 0.38 0.47 9 MAX. 0.62 0.58 3500 27 UNIT V μA mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V12W60C Typical thermal resistance per diode per device RJC 2.8 1.4 per device RJA (1) (2) 65 Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA (2) Free air, without heatsink UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) V12W60C-M3/I 0.38 PACKAGE CODE I BASE QUANTITY 2500/reel DELIVERY MODE 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Rectified Current (A) Average Power Loss (W) 14 12 RthJA=RthJC=1.4oC/W 10 8 6 TA , RthJA=65oC/W 4 2 0 0 25 50 75 100 125 150 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 D = 0.5 D = 0.3 D = 0.2 D = 0.1 D = 0.8 D = 1.0 T D = tp/T tp 123456 Average Forward Current (A) 7 Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 04-Dec-13 2 Document Number: 89972 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 100 Instantaneous Forward Current (A) 10 TA = 150 °C TA = 125 °C 1 TA = 100 °C TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Instantaneous Reverse Current (mA) 100 10 TA = 150 °C TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Transient Thermal Impedance (°C/W) Junction Capacitance (pF) V12W60C-M3 Vishay General Semiconductor 10 000 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 10 0.1 1 10 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode 10 Junction to Case 1 0.1 0.01 0.1 1 10 t - Pulse Duration (s) 100 Fig. 6 - Typical Transient Thermal Impedance Per Device Revision: 04-Dec-13 3 Document Number: 89972 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com PACKAGE OUTLINE DIMENSIONS in inches (millimeters) V12W60C-M3 Vishay General Se.


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