H5N5006LD

H5N5006LD, H5N5006LS, H5N5006LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1115-0100 (Previous: ADE-208-1549) Rev.1.00 Apr 07, 2006 Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H5N5006LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1. Gate 2. Drain 3. Source 4. Drain H5N5006LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 123 H5N5006LM S Rev.1.00 Apr 07, 2006 page 1 of 7 H5N5006LD, H5N5006LS, H5N5006LM Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Ratings 500 ±30 3.5 14 3.5 3.5 50 2.5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C/W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time...