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H5N5006FM

Silicon N Channel MOS FET

Description

H5N5006FM Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance: R DS (on) = 2.5 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 1.5 A) Low gate charge: Qg = 14 nC typ (at VDD = 400 V, VGS = 10 V, ID = 3 A) Avalanche ratings Outline RENE...

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