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H5N2509P

Silicon N Channel MOS FET

Description

H5N2509P Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance: R DS (on) = 0.053 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V, VGS = 0 V) High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 Ω, VGS = 10 V) Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) Avalanche ratings O...

Renesas

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