Silicon N Channel MOS FET
2SK3209
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 40 mΩ typ.
• High speed ...
Description
2SK3209
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS = 40 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1090-0300 (Previous: ADE-208-759A)
Target Specification Rev.3.00
Sep 07, 2005
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D
G 1. Gate 2. Drain 3. Source
12 3
S
Rev.3.00 Sep 07, 2005 page 1 of 3
2SK3209
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID ID(pulse)*1
IDR IAP*3 EAR*3 Pch*2
Tch
Tstg
Ratings 150 ±20 25 100 25 25 46 35 150
–55 to +150
(Ta = 25°C)
Unit V V A A A A mJ W
°C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test
Symbol V(BR)DSS V(BR)GSS
IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on)
tr td(off)
...
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