BCX20LT1

RoHS BCX20LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTORS ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 30 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage Vebo 5.0 V Collector Current Ic 500 mA Total Device Dissipation FR-5 Board(1) Ta=25 PD 225 mw Derate above 25 1.8 mW/ Total Device Dissipation Alumina Substrate,(2) Ta=25 Derate above 25 Junction Temperature ICStorage Temperature PD 300 2.4 Tj 150 Tstg -55-150 mw mW/ NELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Unit OCollector-Base Voltage V(BR)ceo 25 V Collector-Emitter Voltage V(BR)ces 30 V REmitter Cutoff Current Iebo 10 uA TCollector Cutoff Current Icbo ECDC Current Gain LCollector-Emitter Saturation Voltage HFE Vce(sat) 100 70 40 100 nA 5.0 uA 600 620 mV Base-Emitter Saturation Voltage Vbe(on) E* 1.Total Device Dissipation : FR=1X0.75X0.062in . 2.Alumina=0.4 X 0.3 X 0.024in.99.5% alumina 1.2 V JDEVICE MARKING: WEBCX20LT1=U2 2.9 1.9 0.95 0.95 0.4 CO.,LTD1. 2.4 1.3 1 . G AT E 2.SOURCER 3.DRAIE Unit:mm Test Conditions Ic=10mA Ib=0 Ic=10uA Ic=0 Veb=5V Ic=0 Vcb=20V Ie=0 Vcb=20V Ie=0 TA=150 Vce=1.0V Ic=-100mA Vce=1.0V Ic=-300mA Vce=1.0V Ic=-500mA Ic=-500mA Ib=-50mA Vbe=1V Ic=500mA WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...