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BC847S

NPN Silicon Multi-Chip Transistor

Description

Elektronische Bauelemente RoHS Compliant Product BC847S NPN Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 50 V Operating & Storage junction Temperature OO Tj, Tstg : -55 C~ +150 C C 1 B2 E2 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.5...

SeCoS

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