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2SD999

Part Number	2SD999
Manufacturer	WEJ
Description	NPN EPITAXIAL SILICON TRANSISTOR
Published	Apr 8, 2016
Detailed Description	RoHS 2SD999 2SD999 TRANSISTOR (NPN) FEATURES Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A ...
Datasheet	2SD999 PDF File

Overview

RoHS 2SD999 2SD999 TRANSISTOR (NPN) FEATURES Power dissipation DPCM: 0.
5 W (Tamb=25℃) TCollector current ICM: 1 A .
,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1.
BASE 2.
COLLECTOR 3.
EMITTER 1 2 3 CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter ICCollector-base breakdown voltage Collector-emitter breakdown voltage NEmitter-base breakdown voltage OCollector cut-off current REmitter cut-off current TDC current gain CCollector-emitter saturation voltage EBase-emitter saturation voltage LBase-emitter voltage ETransition frequency Collector output capacitance Symbol V(BR)CBO V...

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