2SD601LT1

RoHS 2SD601LT1 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA D* Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW T* High Hfe And Good Linearity ABSOLUTE MAXIMUM RATINGS at Ta=25 .,LCharacteristic Symbol Rating Collector-Base Voltage Vcbo 50 Collector-Emitter Voltage Vceo 45 OEmitter-Base Voltage Vebo 5 2.9 1.9 0.95 0.95 0.4 Collector Current Ic 100 CCollector Dissipation Ta=25 * PD 225 Junction Temperature Tj 150 ICStorage Temperature Tstg -55-150 Unit V V V mA mW 1. 2.4 1.3 1 . G AT E 2 .SO U RC E R 3.DRAIE U nit :m m ELECTRICAL CHARACTERISTICS at Ta=25 NCharacteristic Symbol Min Typ Max Collector-Base Breakdown Voltage BVcbo 50 OCollector-Emitter Breakdown BVceo 45 Voltage# REmitter-Base Breakdown Voltage BVebo 5 Collector-Base Cutoff Current Icbo 50 TEmitter-Base Cutoff Current Iebo 50 DC Current Gain Hfe 135 270 1000 CCollector-Emitter Saturation Voltage Vce(sat) 0.3 EBase-Emitter Saturation Voltage Vbe(sat) 1.00 Base-Emitter on Voltage Vbe(on) 0.58 0.63 o.7 LOutput Capacitance Cob 2.2 3.5 Current Gain-Bandwidth Product fT 150 270 ENoise Figure NF 10 J* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . # Pulse Test : Pulse Width 300uS,Duty cycle 2% EDEVICE MARKING: W 2SD601LT1=L5 Unit V V V nA nA V V V PF MHz dB Test Conditions Ic=100uA Ie=0 Ic= 1mA Ib=0 Ie= 100uA Ic=0 Vcb= 50V Ie=0 Veb= 5V Ic= 0 Vce...